Method for fabricating a capacitor using a metal insulator...

Details Method for fabricating a capacitor using a metal insulator... Method for fabricating a capacitor using a metal insulator...

2007-07-24

2007-07-24

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C257SE21214

Reexamination Certificate

active

10743573

ABSTRACT:
A method for fabricating a capacitor using a metal/insulator/metal (MIM) structure is disclosed. An example method for fabricating a capacitor using an MIM structure including a first metal layer, a dielectric layer, and a second metal layer etches the second metal layer and the dielectric layer in order and changes the etching conditions associated with the second metal layer prior to etching the dielectric layer.

REFERENCES:
patent: 5494837 (1996-02-01), Subramanian et al.
patent: 6004884 (1999-12-01), Abraham
patent: 6083805 (2000-07-01), Ouellet et al.
patent: 6100201 (2000-08-01), Maejima et al.
patent: 6368517 (2002-04-01), Hwang et al.
patent: 6406447 (2002-06-01), Thrash et al.
patent: 6468858 (2002-10-01), Lou
patent: 6597068 (2003-07-01), Petrarca et al.
patent: 6891218 (2005-05-01), Kiyotoshi
patent: 2002/0052077 (2002-05-01), Tee et al.
patent: 2003/0008467 (2003-01-01), Kai et al.
patent: 2003/0064590 (2003-04-01), Hwang
patent: 2003/0068858 (2003-04-01), Allman et al.

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