Method for fabricating a capacitor

Details Method for fabricating a capacitor Method for fabricating a capacitor

2008-07-22

2008-07-22

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S302000, C257S303000, C257S304000, C257SE29346

Reexamination Certificate

active

07402860

ABSTRACT:
The present invention relates to a method of fabricating a capacitor in a semiconductor substrate. The capacitor is fabricated such that the capacitor comprises: a trench inside a substrate, the trench having a lower region and an upper region, wherein the trench's diameters in the lower region is larger than in the upper region; a first electrode; a dielectric layer on top of the first electrode; a conductive layer on top of the electric layer, the conductive layer forming a second electrode of the capacitor; and a plug forming a closed cavity inside the lower region.

REFERENCES:
patent: 6200851 (2001-03-01), Arnold
patent: 6693016 (2004-02-01), Gutsche et al.
patent: 6838334 (2005-01-01), Gluschenkov et al.
patent: 2005/0212027 (2005-09-01), Adam et al.

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