Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2011-08-23
2011-08-23
Monin, Jr., Donald L. (Department: 2814)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S396000, C438S255000
Reexamination Certificate
active
08003481
ABSTRACT:
A method for forming an HSG (hemispherical grain) layer on a storage electrode of a capacitor formed on a substrate is provided. The method includes a step of introducing a source gas into a reacting chamber to deposit a small amount of HSG nuclei on a conductive layer pattern of a capacitor electrode during a step of stabilizing the substrate temperature. After the substrate temperature is stabilized, a larger amount of source gas is introduced into the chamber to form additional HSG nuclei. Thereafter, a step of annealing is performed to form the HSG layer.
REFERENCES:
patent: 5385863 (1995-01-01), Tatsumi et al.
patent: 5821152 (1998-10-01), Han et al.
Kang Seung-Dong
Ko Chang-seog
Lee Kyoung-Bok
Lee Seung-Jin
Jones Volentine, LLC
Monin, Jr. Donald L.
Peralta Ginette
Samsung Electronics Co,. Ltd.
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