Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of... – By differential heating
Reexamination Certificate
2005-06-15
2008-10-21
Smith, Bradley K (Department: 2891)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
By differential heating
C438S795000, C257SE21476, C257SE21497
Reexamination Certificate
active
07439198
ABSTRACT:
A method for fabricating a buried metallic layer at a predetermined vertical position in a semiconductor body having a first and second side includes a step of applying a metal layer to one of the first and second sides at least in sections. The method also includes establishing a positive temperature gradient in a vertical direction of the semiconductor body proceeding from the one side. The temperature in the region of the one side is higher than the eutectic temperatures of system, so that the metal of the metal layer migrates in the vertical direction into the semiconductor body. The method also includes discontinuing the temperature gradient once the metal reaches the predetermined vertical position in the semiconductor body, in order thereby to obtain the metallic layer at the predetermined position.
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Schulze Hans-Joachim
Strack Helmut
Infineon - Technologies AG
Maginot Moore & Beck
Smith Bradley K
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