Method for fabricating a bonded SOI wafer

Details Method for fabricating a bonded SOI wafer Method for fabricating a bonded SOI wafer

1996-12-13

1999-09-14

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438455, 438458, 156281, H01L 21302, H01L 2134

Patent

active

059536209

ABSTRACT:
A method for fabricating a bonded SOI wafer is provided in which no void is produced during a waiting period from the completion of a bonding step to the start of a bonding thermal processing step without a special restriction. The method for fabricating a bonded SOI wafer includes a bonding step in which an active wafer, which has been single- or both-side mirror polished and thermal oxidation processed to form an insulating layer of a predetermined thickness, is pressed and bonded to a single- or both-side mirror polished base wafer; and a bonding thermal processing step for carrying out a bonding thermal processing for bonding the wafer, in which a hydrophobic processing step for the base wafer and a hydrophilic processing step for the active wafer are carried out before the bonding step.

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Karin Ljungberg, Ulf Jansson, Stefan Bengtssaon, and Anders Soderbarg, "Modification of Silicon Surfaces with H2SO4:H202:HF and HNO3:HF for Wafer Bonding Applications", J. Echem. Soc. vol. 143, No. 5, p. 1709, May 1996.
Karin Ljungberg, Ulf Jansson, Stefan Bengtssaon, and Anders Soderbarg, "Modification of Silicon Surfaces with H2SO4:H2O2:HF and HNO3:HF for Wafer Bonding Applications", Proceedings of the Third International Sympossium on Semiconductor Wafer Bonding: Phys, May 1995.
M.K. Weldon "Physics and Chemistry of Silicon Wafer Bonding Investigated by Infrared Absorption Spectoscopy" J.Vac.Sci.Technol. B 14(4) 3095-3105, 1996.
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