Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Including isolation structure
Patent
1999-01-27
1999-10-19
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Including isolation structure
438370, H01L 21331
Patent
active
059703563
ABSTRACT:
A bipolar transistor and a method of fabricating the same are provided which are adapted to reduce chip size and production costs. To produce the transistor, a second conductive type well region is formed in a first conductive type semiconductor substrate and isolation trenches are formed at both sides of the well region. A high density second conductive type buried layer is formed in the semiconductor substrate which is formed at the bottom of the isolation trench. The buried layer is formed in two regions surrounding respective bottoms of two adjacent isolation trenches. The two regions are electrically connected with each other and in direct contact with the well region. An extrinsic base region and a device isolation region are formed sequentially onto the semiconductor substrate using a nitration layer pattern as a mask, wherein the nitration layer pattern is formed on the surface of semiconductor substrate. An intrinsic base region is formed into the well region and an emitter region into the intrinsic base region using the device isolation layer as a mask. The bipolar transistor and method of fabrication can reduce the chip size, the production costs, and the resistance of the collector by forming the isolation trench, wherein the isolation trench is used to form the buried layer and functions as a sink layer (collector layer). The process provides self-alignment of the extrinsic base region, the intrinsic base region, and the emitter region to reduce process scattering.
REFERENCES:
patent: 4871685 (1989-10-01), Taka et al.
patent: 5008208 (1991-04-01), Liu et al.
patent: 5104816 (1992-04-01), Verret et al.
patent: 5332683 (1994-07-01), Miyashita et al.
patent: 5814547 (1998-09-01), Chang
Nguyen Tuan H.
Samsung Electronics Co,. Ltd.
LandOfFree
Method for fabricating a bipolar transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating a bipolar transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a bipolar transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2068572