Fishing – trapping – and vermin destroying
Patent
1993-09-28
1994-09-20
Thomas, Tom
Fishing, trapping, and vermin destroying
437 59, 437 28, 437162, 148DIG9, H01L 21265
Patent
active
053488962
ABSTRACT:
A method for fabricating simultaneously bipolar and complementary MOS transistors is disclosed. After a gate oxide layer for the MOS transistors is grown, the gate oxide layer is etched to expose an intrinsic base region on a bipolar transistor well and to reduce thicknesses of opposite portions of base oxide layers that face one another on two sides of the intransic base region. Impurity is implanted into the intrinsic base region so as to form an intrinsic base of the bipolar transistor, the intrinsic base having a base portion between the base oxide layers and a base link portion connected to the base portion and disposed underneath the opposite portions of the base oxide layers. A polysilicon layer is then deposited on the gate oxide layer, and an impurity is implanted into the polysilicon layer and is driven through the polysilicon layer by high temperature treatment to form an emitter region on the surface of the base portion of the intransic base. An extrinsic base around the base link portion of the intrinsic base is formed during the formation of the sources and drains of the NMOS and PMOS transistors.
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Jang Wen-Yueh
Ko Wen-Chung
Nguyen Tuan
Thomas Tom
Winbond Electronic Corp.
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