Method for fabricating a 3-D integrated circuit using a hard...

Details Method for fabricating a 3-D integrated circuit using a hard... Method for fabricating a 3-D integrated circuit using a hard...

2011-08-09

2011-08-09

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C438S129000, C438S624000, C438S633000, C438S638000, C257S328000, C257SE27020, C257SE27031

Reexamination Certificate

active

07994068

ABSTRACT:
A method for fabricating a 3-D monolithic memory device. Silicon-oxynitride (SixOyNz) on amorphous carbon is used an effective, easily removable hard mask with high selectivity to silicon, oxide, and tungsten. A silicon-oxynitride layer is etched using a photoresist layer, and the resulting etched SixOyNzlayer is used to etch an amorphous carbon layer. Silicon, oxide, and/or tungsten layers are etched using the amorphous carbon layer. In one implementation, conductive rails of the 3-D monolithic memory device are formed by etching an oxide layer such as silicon dioxide (SiO2) using the patterned amorphous carbon layer as a hard mask. Memory cell diodes are formed as pillars in polysilicon between the conductive rails by etching a polysilicon layer using another patterned amorphous carbon layer as a hard mask. Additional levels of conductive rails and memory cell diodes are formed similarly to build the 3-D monolithic memory device.

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