Method for fabricating 1T-DRAM on bulk silicon

Details Method for fabricating 1T-DRAM on bulk silicon Method for fabricating 1T-DRAM on bulk silicon

2011-08-30

2011-08-30

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S149000, C438S153000, C438S154000, C438S155000, C257S068000, C257S069000, C257S070000, C257S204000, C257S347000, C257S353000, C257S401000, C257SE27112

Reexamination Certificate

active

08008137

ABSTRACT:
An integrated circuit includes a bulk technology integrated circuit (bulk IC) including a bulk silicon layer and complementary MOSFET (CMOS) transistors fabricated thereon. The integrated circuit also includes a single transistor dynamic random access memory (1T DRAM) cell arranged adjacent to and integrated with the bulk IC.

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Communication from the European Patent Office dated Jun. 15, 2010 with the Extended European Search Report regarding Application No. 07005406.9-2203.

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