Method for extended ion implanter source lifetime with control m

Details Method for extended ion implanter source lifetime with control m Method for extended ion implanter source lifetime with control m

1997-08-20

1999-08-24

Chaudhari, Chandra

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438 17, 438919, H01L 21265

Patent

active

059435941

ABSTRACT:
A method for controlling the implantation of ions into a target. An ion source chamber having a filament for causing evolution of the ions to be implanted is provided. An ion source reactant gas is provided for providing a source of the ion species to be implanted. A counteracting gas is provided to counter the chemical transport from or to the filament depending on the reaction between the ion source gas ions and the filament and to compensate for the reaction. The ion source reactant is introduced into the ion source chamber. Parameters regarding electrical or physical characteristics of the filament are measured. The counteracting gas is introduced based upon the measured parameters, wherein the counteracting gas forms ions to compensate for removal or deposition of material on the filament. The ions to be implanted are extracted from ion source chamber and directed to the target.

REFERENCES:
patent: 4370176 (1983-01-01), Bruel
patent: 4714628 (1987-12-01), Eloy
patent: 5235451 (1993-08-01), Bryan
patent: 5262652 (1993-11-01), Bright et al.
patent: 5354698 (1994-10-01), Cathey, Jr.
patent: 5466942 (1995-11-01), Sakai et al.
patent: 5766695 (1998-06-01), Nguyen et al.
patent: 5817536 (1998-10-01), Nayak et al.

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