Method for extended ion implanter source lifetime

Details Method for extended ion implanter source lifetime Method for extended ion implanter source lifetime

1997-04-30

1999-08-17

Chaudhari, Chandra

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438919, H01L 21425

Patent

active

059407247

ABSTRACT:
The life of a source filament in an ion implantation tool is extended by providing in the ion implantation tool both an ion source reactant gas for providing a source of ion species to be implanted and a counteracting gas to counter the chemical transport from or to the filament, depending upon the reaction that occurs between the ion source gas ions and the source filament.

REFERENCES:
patent: 4670064 (1987-06-01), Schachameyer et al.
patent: 5235451 (1993-08-01), Bryan
patent: 5262652 (1993-11-01), Bright et al.
patent: 5354698 (1994-10-01), Cathey et al.
patent: 5466942 (1995-11-01), Sakai et al.

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