Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1994-11-29
1998-12-29
Everhart, Caridad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438654, 438657, 438636, 438720, H01L 21465
Patent
active
058541322
ABSTRACT:
A method for patterning a polysilicon layer includes creating a TiN layer above an amorphous silicon (a-Si) layer forming a TiN/a-Si stack. The TiN/a-Si stack is formed above the polysilicon layer. The TiN layer serves as an ARC to reduce overexposure of the photoresist used to pattern the polysilicon layer, while the a-Si layer prevents contamination of the layer below the polysilicon layer.
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Fewkes Jonathon
Luning Scott
Pramanick Shekhar
Advanced Micro Devices , Inc.
Everhart Caridad
Kwok Edward C.
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