Method for examination of silicon wafer surface defects

Details Method for examination of silicon wafer surface defects Method for examination of silicon wafer surface defects

1995-09-18

1997-07-01

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566281, 1566621, 216 87, H01L 2100

Patent

active

056434049

ABSTRACT:
A method of examining surface defects of silicon wafer surfaces, comprising (A) preparing a semiconductor treating solution containing an impurity element labelled with a radioactive isotope; (B) bringing a silicon wafer whose crystal surface is laid bare, into contact with the treating solution to obtain a specimen wafer on which the labelled impurity has been adsorbed; (C) recording in a photostimulable phosphor layer a data of radioactivity intensible distribution present in the surface of the specimen wafer; the pattern being recorded as a latent image; and (D) reading as a visual image the data of radioactivity intensity distribution recorded in the photostimulable phosphor layer, to observe the radioactivity intensity distribution shown on the image, whereby the distribution of the surface defects being detected. It is possible to catch at a glance as a visual image the extent and distribution of the surface defects including crystal defects and surface states formed by contamination with impurities and to make easy the evaluation of silicon wafers.

REFERENCES:
patent: 3518131 (1970-06-01), Glendinning

Affiliated with

Also associated with

Rating

Method for examination of silicon wafer surface defects does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for examination of silicon wafer surface defects, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for examination of silicon wafer surface defects will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-593693