Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2007-02-13
2007-02-13
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C438S781000, C430S270210, C257SE21492
Reexamination Certificate
active
10948162
ABSTRACT:
The present invention provides a method for evaluating a solution for a coating film for semiconductor, which comprises measuring Clogging Degree of a solution for a coating film for semiconductor when the solution is filtrated through a filter having an average pore size of 0.01 to 0.4 μm, andestimating quality of the coating film formed from the solution,wherein the Clogging Degree is defined by the following formula:in-line-formulae description="In-line Formulae" end="lead"?Clogging Degree=V2/V1in-line-formulae description="In-line Formulae" end="tail"?V1: A value of linear velocity of filtrate (filtrating rate per 1 cm2of filter (g/(cm2·min)) at initial standard point in the case that a solution is filtrated at a fixed pressure and temperatureV2: A value of linear velocity of filtrate at the point the predetermined weight of filtrate discharged from the initial standard pointAccording to the present method, quality of coating films can be figured out without actual formation of the coating films, and solutions for coating films can be evaluated thereby.
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Hanamoto Yukio
Yamamoto Satoshi
Isaac Stanetta
Lebentritt Michael
Sumitomo Chemical Company Limited
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