Method for evaluating semiconductor wafer and apparatus for...

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

Reexamination Certificate

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C324S765010

Reexamination Certificate

active

07633305

ABSTRACT:
The present invention is a method for evaluating a semiconductor wafer by measuring an electric characteristic of the semiconductor wafer by using a mercury electrode, wherein when the semiconductor wafer is held on a wafer chuck that the mercury electrode is formed in a holding surface of so that a side of a surface to be measured of the semiconductor wafer is set to a side of the wafer chuck, the semiconductor wafer is held on the wafer chuck whose diameter forming an outermost periphery of the holding surface is smaller than a diameter forming an outermost periphery of the surface to be measured of the semiconductor wafer, and then, the electric characteristic is measured by contacting the mercury electrode with the surface to be measured of the wafer, and an evaluation apparatus. Thereby, there can be provided an evaluation method and an evaluation apparatus for a semiconductor wafer by which when the semiconductor wafer is evaluated by measuring an electric characteristic thereof by using a mercury electrode, the semiconductor wafer can be high-precisely and effectively evaluated by setting a size of a holding surface of a wafer chuck to be smaller than that of a surface to be measured of the semiconductor wafer that is an object to be measured.

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Cristoloveanu et al.; “A Review of the Pseudo-MOS Transistor in SOI Wafers: Operation, Parameter Extractions, and Applications;” IEEE Transactions on Electron Devices; vol. 47; No. 5; May 2000; pp. 1018-1027.
Hovel; “Si film electrical characterization in SOI substrates by the HgFET technique;” Solid-State Electronics; 2003; pp. 1-23.

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