Method for evaluating HSG silicon film of semiconductor device b

Details Method for evaluating HSG silicon film of semiconductor device b Method for evaluating HSG silicon film of semiconductor device b

1998-01-22

1999-10-19

Chaudhuri, Olik

Semiconductor device manufacturing: process

With measuring or testing

73105, H01L 2166

Patent

active

059703121

ABSTRACT:
An evaluating method of an HSG silicon film using atomic force microscopy (AFM). The characteristics of the HSG silicon film are measured and expressed with quantitative values using AFM. The above values are compared to values written in the working specification, to thereby evaluate the HSG silicon film and control the conditions of forming the HSG silicon film. Also, the capacitor where the HSG silicon film is interposed is formed, and then the capacitance of the capacitor is measured to determine the HSG height of the HSG silicon film for ensuring desired capacitance and conditions of forming the HSG silicon film. Accordingly, the characteristics of the HSG silicon film may be analyzed without damaging the semiconductor substrate and a preferred working specification for forming the HSG silicon film may be realized, to thereby increase the reproducibility of the HSG silicon film. Also, when the conditions of forming the HSG silicon film are determined, it is checked whether the apparatus for forming the HSG silicon film operates normally.

REFERENCES:
patent: 5420796 (1995-03-01), Weling et al.
patent: 5614435 (1997-03-01), Petroff et al.
patent: 5776809 (1998-07-01), Schuegraf
Mitch Haller, Janine Sullivan, George Collins, Multidomain Ellipsometry for Thin Film Process Control, Semiconductor International, Figure 4, Jul. 1998.

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