Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Reexamination Certificate
2006-02-06
2009-11-24
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
C257SE21531, C324S765010
Reexamination Certificate
active
07622312
ABSTRACT:
The present invention provides a method for evaluating dopant contamination of a semiconductor wafer, wherein a resistivity of a bulk portion of the semiconductor wafer is measured by an eddy current method, a resistivity in a surface layer of the semiconductor wafer is measured by a surface photovoltage method, and an amount of dopant contamination of the semiconductor wafer is calculated from a difference between a value of the resistivity of the bulk portion measured by the eddy current method and a value of the resistivity in the surface layer measured by the surface photovoltage method. As a result of this, it is possible to provide the method for evaluating dopant contamination of a semiconductor wafer, which can measure the amount of dopant contamination of a whole surface layer of the semiconductor wafer without contact, nondestructively, and accurately.
REFERENCES:
patent: 6140131 (2000-10-01), Sunakawa et al.
patent: 6303396 (2001-10-01), Ring et al.
patent: 6462538 (2002-10-01), Harada
patent: 6489776 (2002-12-01), Stowe et al.
patent: 6878038 (2005-04-01), Swedek et al.
patent: 6884634 (2005-04-01), Suzuki et al.
patent: 6914442 (2005-07-01), Ebara
patent: 7030633 (2006-04-01), Qiu et al.
patent: 7078919 (2006-07-01), Prussin
patent: 7106425 (2006-09-01), Bultman et al.
patent: 7141992 (2006-11-01), Ohno et al.
patent: 2002/0090746 (2002-07-01), Xu et al.
patent: A 01-012277 (1989-01-01), None
patent: A 2004-055935 (2004-02-01), None
patent: A 2004-207601 (2004-07-01), None
ASTM Designation: F 723-82; (1982); Standard Practice for Conversion Between Resistivity and Dopant Density For Boron Doped and Phosphorus-Doped Silicon; pp. 1267-1283.
Oliff & Berridg,e PLC
Sarkar Asok K
Shin-Etsu Handotai & Co., Ltd.
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