Method for evaluating an SOI substrate, evaluation...

X-ray or gamma ray systems or devices – Specific application – Diffraction – reflection – or scattering analysis

Reexamination Certificate

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C378S071000

Reexamination Certificate

active

06963630

ABSTRACT:
A method for evaluating an SOI layer on an insulating film disposed on a base substrate so as to construct an SOI substrate, includes: measuring a first diffraction intensity distribution of an X-ray beam corresponding to an incident angle formed with the X-ray beam and a front surface of the SOI substrate by irradiating the X-ray beam onto the base substrate; measuring a second diffraction intensity distribution of the X-ray beam for the incident angle formed with the X-ray beam and the front surface of the SOI substrate by irradiating the X-ray beam onto the SOI layer; determining an evaluation diffraction peak corresponding to the SOI layer from the first and the second diffraction intensity distribution; and observing an X-ray topograph by irradiating the X-ray beam on the SOI layer with a second incident beam angle of the evaluation diffraction peak.

REFERENCES:
patent: 5461007 (1995-10-01), Kobayashi
patent: 6064717 (2000-05-01), Ortega et al.
patent: 6385289 (2002-05-01), Kikuchi
patent: 6537606 (2003-03-01), Allen et al.
patent: 2001/0043668 (2001-11-01), Hayashi et al.
patent: 9-311111 (1997-12-01), None

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