Method for etching vertical contact holes without substrate dama

Details Method for etching vertical contact holes without substrate dama Method for etching vertical contact holes without substrate dama

1995-08-03

1997-08-05

Dang, Trung

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438637, 438704, 438696, H01L 2144

Patent

active

056542380

ABSTRACT:
A method of etching vias without directional etching damage to the substrate. A pattern image is formed on an insulating layer of known thickness over a substrate. A conformal layer is formed on the pattern image. A vertical contact hole through the conformal layer and into the insulating layer is produced by directional etching. The directional etch also leaves conformal sidewall spacers of a defined width. The depth of the vertical contact hole is equal to the thickness of the insulating layer minus the width of the conformal spacer. The insulating layer is then removed by an isotropic wet etch to achieve a near vertical edge contact hole without directional etching damage to the substrate. The sidewall spacers may also be removed by etching prior to removal of the insulating layer.

REFERENCES:
patent: 4636281 (1987-01-01), Buiguez et al.
patent: 4707218 (1987-11-01), Giammarco et al.
patent: 4792534 (1988-12-01), Tsuji et al.
patent: 4857477 (1989-08-01), Kanamori
patent: 4878105 (1989-10-01), Hirakawa et al.
patent: 5279989 (1994-01-01), Kim
patent: 5567270 (1996-10-01), Liu
Kerbaugh, et al., "Methods of Forming Small Contact Holes", IBM Technical Disclosure Bulletin V30, N8, dtd Jan. 1988, pp. 252-253.
Davis, "Fabrication of a Sub-Minimum Lithography Trench", IBM Technical Disclosure Bulletin V29, N6, dtd Nov. 1986, pp. 2760-2761.
Pogge, "Narrow Line-Width Masking Method", IBM Technical Disclosure Bulletin V19, N6, dtd Nov. 1976, pp. 2057-2058.

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