Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1989-03-02
1990-04-10
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156646, 156656, 1566591, 252 791, C23F 102, B44C 122, C03C 1500, C03C 2506
Patent
active
049157779
ABSTRACT:
A process wherein a thin film of tungsten is anisotropically etched under plasma bombardment conditions by using a feed gas mixture which includes an etchant and a carbon containing gas. This chemistry provides anisotropic high rate fluoro-etching with good selectivity to photoresist.
REFERENCES:
patent: 4713141 (1987-12-01), Tsang
Mehta et al., "Blanket CVD Tungsten Interconnect for VLSI Devices," 1986 V-MIC Conf., IEEE, pp. 418-435.
Burba et al., "Selective Dry Etching of Tungsten for VLSI Metallization", Journal of the Electrochemical Society, Oct. 1986, pp. 2113-2118.
Davis Cecil J.
Douglas Monte A.
Jucha Rhett B.
Bardnt B. Peter
Comfort James T.
Powell William A.
Sharp Melvin
Texas Instruments Incorporated
LandOfFree
Method for etching tungsten does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for etching tungsten, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for etching tungsten will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2297600