Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1988-06-10
1991-03-05
Simmons, David A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156646, 156651, 156656, 156664, 20412932, 20419235, C23F 102
Patent
active
049975200
ABSTRACT:
A method for etching a tungsten film which includes introducing activated species of a halogenated hydrocarbon to the tungsten film.
REFERENCES:
patent: 4517225 (1985-05-01), Broadbent
patent: 4617087 (1986-10-01), Iyer et al.
patent: 4671847 (1987-06-01), Clawson
patent: 4678593 (1987-07-01), Tomita et al.
patent: 4698130 (1987-10-01), Restall et al.
patent: 4705593 (1987-11-01), Haigh et al.
patent: 4786360 (1988-11-01), Cote et al.
patent: 4804560 (1989-02-01), Shioya et al.
patent: 4836886 (1989-06-01), Daubenspeck et al.
patent: 4836887 (1989-06-01), Daubenspeck et al.
patent: 4842683 (1989-06-01), Cheng et al.
Franssila, Sami "Tungsten Dry Etching in Medium Pressure Single Wafer Etcher", May, 1988.
Burba et al., "Selective Dry Etching of Tungsten for VLSI Metallization", Oct. 1986, Journal of the Electrochemical Society.
Achenbach Jeff D.
Carter Duane
Davis Cecil J.
Jucha Rhett B.
Dang Thi
Honeycutt Gary C.
Merrett N. Rhys
Sharp Melvin
Simmons David A.
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