Method for etching titanium nitride layers

Details Method for etching titanium nitride layers Method for etching titanium nitride layers

1996-05-20

1999-02-16

Codd, Bernard

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438710, 438723, 438729, 438737, 216 71, B44C 122

Patent

active

058720626

ABSTRACT:
A method is provided wherein a process suitable for subtractive etching of titanium nitride layers useful in the fabrication of semiconductor integrated circuit devices can be efficiently employed on commercially-available plasma reactor system equipment normally suitable only for subtractive etching of passivation layer materials and the like, resulting in increased efficiency and reduced cost in the manufacturing of such devices.

REFERENCES:
patent: 4786352 (1988-11-01), Benzing
patent: 4877482 (1989-10-01), Knapp et al.
patent: 5302240 (1994-04-01), Hori et al.
patent: 5326427 (1994-07-01), Jerbic
patent: 5419805 (1995-05-01), Jolly
patent: 5549784 (1996-08-01), Carmody et al.

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