Method for etching silicon surface

Details Method for etching silicon surface Method for etching silicon surface

1997-03-13

1999-05-11

Housel, James C.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156653, 156656, 156643, 156662, 1566611, B44C1/22

Patent

active

059024526

ABSTRACT:
The present invention discloses a method for etching a silicon surface or forming alignment marks in a silicon substrate by first coating the substrate with an oxide layer, then depositing and patterning a photoresist layer on top of the oxide layer and forming the alignment marks by a dry etching process utilizing fluorine/oxygen etchant chemistry for the simultaneous etching of the two layers in a single process wherein the oxide layer prevents the contamination of the silicon wafer by any silicon particles formed.

REFERENCES:
patent: 5106432 (1992-04-01), Matsumoto et al.
patent: 5128280 (1992-07-01), Matsumoto et al.
patent: 5346586 (1994-09-01), Keller
patent: 5733711 (1998-03-01), Juengling

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