Method for etching silicon-containing ARC layer with reduced...

Details Method for etching silicon-containing ARC layer with reduced... Method for etching silicon-containing ARC layer with reduced...

2011-02-15

2011-02-15

Culbert, Roberts (Department: 1716)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S719000, C216S047000

Reexamination Certificate

active

07888267

ABSTRACT:
A method of dry developing a multi-layer mask having a silicon-containing anti-reflective coating (ARC) layer on a substrate is described. The method comprises forming the multi-layer mask on the substrate, wherein the multi-layer mask comprises a lithographic layer overlying the silicon-containing ARC layer. A feature pattern is then formed in the lithographic layer using a lithographic process. Thereafter, the feature pattern is transferred from the lithographic layer to the silicon-containing ARC layer using a dry plasma etching process, wherein the offset in the critical dimension (CD) bias is reduced between nested structures and isolated structures.

REFERENCES:
patent: 6599437 (2003-07-01), Yauw et al.
patent: 7531461 (2009-05-01), Ko
patent: 2002/0142252 (2002-10-01), Ng

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