Method for etching silicon and a residue and oxidation resistant

Details Method for etching silicon and a residue and oxidation resistant Method for etching silicon and a residue and oxidation resistant

1978-10-11

1980-02-05

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156647, 252 791, C09K 1300

Patent

active

041871405

ABSTRACT:
There are provided quaternary etchants comprising ethylenediamine, pyrocatechol, water and a diazine as catalyst for the etching of polycrystalline or single crystal silicon over a wide temperature and etch rate range. The etchants provide residue free dissolution, and have etch rates which are essentially unchanged when exposed to oxygen. The etch rate of the etchants can be modulated by the change in concentrations of water and/or pyrocatechol.
There is also provided a method for etching polycrystalline or single crystal silicon using the etchants of this invention.

REFERENCES:
patent: 4007464 (1977-02-01), Bassous et al.
patent: 4113551 (1979-09-01), Bassous et al.
patent: 4155866 (1979-05-01), Berkenblit et al.
Bassous, "Controlled . . . Silicon", IBM Technical Disclosure Bulletin, vol. 19, No. 9, (Feb. 77), p. 3623.
Finne et al., "A Water-Amine . . . Silicon", J. Electrochemical Society, vol. 114, No. 9, (1967), pp. 965-969.
Bohg, "Ethylene Diamine . . . Silicon", J. Electrochemical Society, vol. 118, No. 2, pp. 401-403, (2/77).

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