Method for etching semiconductor materials using a remote plasma

Details Method for etching semiconductor materials using a remote plasma Method for etching semiconductor materials using a remote plasma

1989-05-23

1991-01-29

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437228, 437235, 437238, 148DIG51, 156643, 156653, 427 38, 427 39, H01L 2100, H01L 2102, B44C 122, C03C 1500

Patent

active

049886444

ABSTRACT:
An apparatus and a method for the etching of semiconductor materials is disclosed. The apparatus includes a process chamber which includes a plasma generator remote from and in fluid communication with the process chamber. The remote plasma generator includes an inlet tube, a discharge tube in fluid communication with the inlet tube, an excitation cavity surrounding the discharge tube, an outlet tube in fluid communication with the discharge tube and a process chamber, and an injection tube in the outlet tube.

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Hattangady, S., Low Hydrogen Content Silicon Nitride Deposited at Low Temperature by Novel Remote Plasma Technique, J. Vac. Sci. Tech. A, Vac. Surf. Films (U.S.A.), vol. 7, No. 3, pt. 1, pp. 570-575, May 1989.
Loewenstein, L., Selective Etching of Silicon Nitride Using Remote Plasmas of CF.sub.4 and SF.sub.6 J. Vac. Sci. Tech. A, Vac. Surf. Films (U.S.A.), vol. 7, No. 3, pt. 1, pp. 686-690, May 1989.
Loewenstein, L., Effect of Oxygen on Fluorine-Based Remote Plasma Etching of Silicon and Silicon Dioxide, J. Vac. Sci. Tech. A, Vac. Surf. Films (U.S.A.), vol. 6, No. 3, pt. 2, pp. 1984-1988, May 1988.
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