Method for etching polysilicon film

Details Method for etching polysilicon film Method for etching polysilicon film

1992-04-07

1994-06-07

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156662, 437233, H01L 21306

Patent

active

053186656

ABSTRACT:
In etching a polysilicon film having a large step difference by means of the RIE method, use is made of a mixed gas of HBr and Ar (10 to 25%) or a mixed gas of HBr, Ar (5 to 25 %), and O.sub.2 (0.2 to 2%). With this arrangement, it is possible to eliminate the residuals in the step part, and etch the polysilicon film with high anisotropy with little etching of the underlying oxide film.

REFERENCES:
patent: 4490209 (1984-12-01), Hartman
patent: 5007982 (1991-04-01), Tsou
patent: 5013398 (1991-05-01), Long et al.
patent: 5160407 (1992-11-01), Latchford et al.
L. Y. Tsou, "Highly Selective Reactive Ion Etching of Polysilicon with Hydrogen Bromide", J. Electrochem. Soc., vol. 136, No. 10, Oct. 1989.

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