Method for etching polymer-assisted reduced small contacts for u

Details Method for etching polymer-assisted reduced small contacts for u Method for etching polymer-assisted reduced small contacts for u

1996-06-21

1998-02-17

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438700, 438719, 438723, 438947, 438696, H01L 21465

Patent

active

057190895

ABSTRACT:
A method for fabricating small contact openings in the polysilicon/metal 1 dielectric (PMD) layer on semiconductor substrates using polymer sidewall spacers was achieved. This extends the current photoresist resolution limits while simplifying the manufacturing process. The method involves depositing a polysilicon layer on the PMD layer and using a photoresist mask having openings over device contact areas in the substrate. The polysilicon layer is then patterned to form openings with vertical sidewalls to the PMD insulating layer. The contact openings are then anisotropically plasma etched in a gas mixture that simultaneously forms polymer sidewall spacers on the sidewalls in the openings in the polysilicon layer. These sidewall spacers further reduce the contact opening size. The remaining photoresist layer and polymer sidewall spacers are simultaneously removed to complete the narrow contact openings. This method eliminates the need to use an additional deposition and etch-back step to form the sidewalls. A metal layer is then deposited and patterned to form the metal contacts and first level of interconnections.

REFERENCES:
patent: 5198388 (1993-03-01), Kawai
patent: 5279989 (1994-01-01), Kim
patent: 5279990 (1994-01-01), Sun et al.
patent: 5444021 (1995-08-01), Chung et al.
patent: 5562801 (1996-10-01), Nulty

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