Etching a substrate: processes – Etching of semiconductor material to produce an article...
Patent
1997-01-16
1998-11-10
Housel, James C.
Etching a substrate: processes
Etching of semiconductor material to produce an article...
216 97, 216 80, 216 51, 438 50, B44C 122, C03C 1500, C03C 2506, H01L 21306
Patent
active
058338691
ABSTRACT:
A method (202) for etching photolithographically produced quartz crystal blanks for singulation. In a first step (202), a quartz wafer is plated on both sides with metal and subsequently coated on both sides with photoresist. In a second step (204), the photoresist is patterned and developed and the metal layer on one side is etched through to form a narrow channel in the quartz defining a perimeter of a quartz blank. In a third step (206), the quartz channel is preferentially etched partially into the wafer along parallel atomic planes to provide a mechanically weak junction between the quartz wafer and the blanks to be singulated. In a fourth step (208), the photoresist layers are stripped from the quartz wafer. In a final step (210), the quartz blank is cleaved substantially along the bottom of the quartz channel to singulate the crystal blanks from the quartz wafer.
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Haas Kevin
Kim Sang
Witte Robert
Cunningham Gary J.
Housel James C.
Maucini Brian M.
Motorola Inc.
Portner Ginny Allen
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