Method for etching oxide film in plasma etching system

Details Method for etching oxide film in plasma etching system Method for etching oxide film in plasma etching system

1998-02-23

2000-08-15

Gulakowski, Randy

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 46, 216 72, 438294, 438696, 438723, 438738, C23F 100

Patent

active

061031372

ABSTRACT:
Method for etching an oxide film in a plasma etching system, specifically in a high concentration plasma etching system, is disclosed, in which a mixture of new etching gas chemistry of first, second and third gases is used in forming an oxide film suitable to an integrated circuit with a high device packing density, for improving an etch rate and an etch selectivity of the oxide film to a sub-layer, the mixture gas consisting of CHF.sub.X /C.sub.a HF.sub.b /C.sub.Y F.sub.Z, CHF.sub.X /CH.sub.b F/C.sub.Y F.sub.Z or CHF.sub.X /CH.sub.a F.sub.b /C.sub.Y F.sub.Z.

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