Method for etching of a silicon substrate and etching apparatus

Details Method for etching of a silicon substrate and etching apparatus Method for etching of a silicon substrate and etching apparatus

2007-05-22

2007-05-22

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S710000, C216S067000

Reexamination Certificate

active

10988042

ABSTRACT:
A method for etching a silicon substrate is presented in which fast etching speed and etching structures with smooth and perpendicular wall surfaces are achieved. In the etching step, a constant electric power is applied to the silicon substrate to provide a bias potential. Using a mixture of SF6gas and fluorocarbon gas, there is a step mainly for the progression of dry etching of the etching ground surface. Similarly, using a mixture gas, there is a step mainly for forming a protective layer on the structure surfaces which are perpendicular with respect to the etching ground surface. These two steps are repeated one after the other. In the step for dry etching, the mixture gas is 5–12 volume of fluorocarbon gas with respect to 100 volume SF6gas. The mixture gas in the protective film formation step is a mixture of 2–5 volume of SF6gas with respect to 100 volume fluorocarbon gas.

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International Search Report in Japanese for PCT/JP2004/003693 mailed Jun. 29, 2004.
Patent Abstracts of Japan for JP2002-323454 published on Nov. 24, 2000.
Patent Abstracts of Japan for JP2000-299310 published on Oct. 24, 2000.
Patent Abstracts of Japan for JP11-195641 published on Jul. 21, 1999.

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