Method for etching object to be processed

Details Method for etching object to be processed Method for etching object to be processed

2002-06-10

2008-10-07

Chen, Kin-Chan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S714000, C438S723000

Reexamination Certificate

active

07432207

ABSTRACT:
An object to be processed has a structure having an SiC film and an organic Si-low dielectric constant film formed on the SiC film. The SiC film is etched using a plasma produced from an etching gas and using the organic Si low-dielectric constant film as a mask. The etching gas contains CH2F2or CH3F.

REFERENCES:
patent: 5741396 (1998-04-01), Loewenstein
patent: 5786276 (1998-07-01), Brooks et al.
patent: 5958793 (1999-09-01), Patel et al.
patent: 6103590 (2000-08-01), Swanson et al.
patent: 6232184 (2001-05-01), Wang et al.
patent: 6251770 (2001-06-01), Uglow et al.
patent: 6284657 (2001-09-01), Chooi et al.
patent: 6329290 (2001-12-01), Zhao
patent: 6337277 (2002-01-01), Chou et al.
patent: 6448177 (2002-09-01), Morrow et al.
patent: 6617244 (2003-09-01), Nishizawa
patent: 6635185 (2003-10-01), Demmin et al.
patent: 6670278 (2003-12-01), Li et al.
patent: 6764958 (2004-07-01), Nemani et al.
patent: 8-55835 (1996-02-01), None
patent: 2001-68455 (2001-03-01), None
patent: 2002-110644 (2002-04-01), None

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