Method for etching nitride features in integrated circuit constr

Details Method for etching nitride features in integrated circuit constr Method for etching nitride features in integrated circuit constr

1997-06-18

1999-10-19

Wojciechowicz, Edward

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438696, 438699, 438703, 438712, 438724, 438725, 438749, 257324, H01L 2972

Patent

active

059688440

ABSTRACT:
A process for etching nitride layers in three steps is disclosed. The process comprises selecting a process chemistry of CF.sub.4 to CHF.sub.3 to set a predetermined critical dimension bias; conducting a primary etch of the process chemistry which will have a high etch rate; and conducting a secondary etch of ion bombardment having a lower etch rate and high selectivity to pad oxide. In selecting the process chemistry, selecting greater amounts of CHF.sub.3 will result in higher polymer concentration on the etched sidewall. Varying the pressure and power can also be used to vary the polymer concentration. This in turn is used to select the desired critical dimension bias. The secondary etch uses a mixture of NF.sub.3 and HBr and is performed at a high pressure and a low power to promote high nitride to oxide selectivity. The secondary etch removes the majority of polymer from the nitride sidewalls and cleans the polymer from the chamber walls, resulting in an anisotropic etch and a high number of wafers produced before cleaning is necessary.

REFERENCES:
patent: 5326431 (1994-07-01), Kadamura
patent: 5338395 (1994-08-01), Keller et al.

Affiliated with

Also associated with

Rating

Method for etching nitride features in integrated circuit constr does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for etching nitride features in integrated circuit constr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for etching nitride features in integrated circuit constr will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2055097