Method for etching nitride

Details Method for etching nitride Method for etching nitride

1997-12-10

1999-04-20

Breneman, R. Bruce

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

438 18, 438746, 438752, 2041293, H01L 21302

Patent

active

058952233

ABSTRACT:
A method for etching nitride is provided, by which the etching rate and the roughness of the etching surface can be powerfully controlled, and by which the etching depth can be in-situ monitored. The etching method comprises the steps of: (i) coating a first electrode on a nitride chip; (ii) mounting the nitride chip on a holding device; (iii)dipping the holding device, the nitride chip and the first electrode in electrolysis liquid; (iv) irradiating the nitride chip with a UV light having a wavelength shorter than 254 nm; and (v) connecting the first electrode to a second electrode dipped in the electrolysis liquid by a galvanometer to in-situ monitor the etching current, so as to in-situ control the etching depth.

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M.S. Minsky et al., "Room-temperature photoenhanced wet etching of GaN," Appl. Phys. Let., vol. 68, No. 11, pp. 1531-1533 (1996).
H. Lu et al., "Photoassisted Anodic Etching of Gallium Nitride," J. Electrochem. Soc., vol. 144, No. 1, L8-L11 (1997).
C. Youtsey et al., "Broad-area photoelectrochemical etching of GaN," Electronics Letters, vol. 33, No. 3, pp. 245-246 (1997).
"Pulsed Electrochemical Etching of (In,Ga)N/GaN LED Material"; Proc. SPIE--Int. Opt. Soc. Eng. (1997') ; V3002; pp. 11-14; Jeongseok et al.
"Room-Temperature Photoenhanced Wet Etching of GaN"; Minsky et. al.; Mar. 1996'; Appl. Phys. Lett. 68(11); pp. 1531-1533.
"Electrochemical Etching of A Conductive GaN Crystal For Patterning"; Yoshida; J. of Crystal Growth; 181(3); 1977'; pp. 293-296.
"Photoassisted Anodic Etching of Gallium Nitride"; Lu et. al.; J. Elect. Soc.; V144(l); pp. L8-L11; Jan. 1997'.

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