Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1996-06-17
1999-03-09
Chapman, Mark
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438714, 438719, 438721, 216 67, 216 72, H01L 2100
Patent
active
058800336
ABSTRACT:
A method for etching metal silicide layers 22a, 22b and polysilicon layers 24a, 24b on a substrate 20 with high etching selectivity, and anisotropic etching properties, is described. In the method, the substrate 20 is placed in a plasma zone 55, and process gas comprising Cl.sub.2, O.sub.2, and N.sub.2, is introduced into the plasma zone. A plasma is formed from the process gas to selectively etch the metal silicide layer 22 at a first etch rate that is higher than a second rate of etching of the polysilicon layer 24, while providing substantially anisotropic etching of the metal silicide and polysilicon layers. Preferably, the plasma is formed using combined inductive and capacitive plasma sources.
REFERENCES:
patent: 4411734 (1983-10-01), Maa
patent: 4460435 (1984-07-01), Maa
patent: 4465532 (1984-08-01), Fukano
patent: 4490209 (1984-12-01), Hartman
patent: 4878994 (1989-11-01), Jucha et al.
patent: 5094712 (1992-03-01), Becker et al.
patent: 5160407 (1992-11-01), Latchford et al.
patent: 5188980 (1993-02-01), Lai
patent: 5192702 (1993-03-01), Tseng
patent: 5211804 (1993-05-01), Kobayashi et al.
patent: 5256245 (1993-10-01), Keller et al.
patent: 5310453 (1994-05-01), Fukasawa et al.
patent: 5338398 (1994-08-01), Szwejowski et al.
patent: 5346578 (1994-09-01), Benzing et al.
patent: 5408130 (1995-04-01), Woo et al.
patent: 5431772 (1995-07-01), Babie et al.
patent: 5437765 (1995-08-01), Loewenstein
patent: 5468296 (1995-11-01), Patrick et al.
patent: 5487811 (1996-01-01), Iizuka
patent: 5488246 (1996-01-01), Hayashide et al.
patent: 5505322 (1996-04-01), Shinohara et al.
patent: 5529197 (1996-06-01), Grewal
patent: 5540800 (1996-07-01), Qian
patent: 5558722 (1996-09-01), Okumura et al.
patent: 5591301 (1997-01-01), Grewal
patent: 5660681 (1997-08-01), Fukuda et al.
Maruyama, et al., "Mechanism of WSi.sub.2 Etching Using ECR Plasma," 1993 Dry Process Symposium pp. 55-60.
Parks, et al., "Plasma Etching of Tungsten Polycide Structures Using NF.sub.3 -Mixed Halocarbon Etchants," J. Electrochem. Soc., vol. 138(9):2736-2740, Sep. 1991.
Applied Materials Inc.
Chapman Mark
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