Method for etching metal layer of a semiconductor device using h

Details Method for etching metal layer of a semiconductor device using h Method for etching metal layer of a semiconductor device using h

1998-08-26

1999-12-28

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 47, 216 51, 216 75, 216 76, 438736, 438742, H01L 2100

Patent

active

06008135&

ABSTRACT:
A method for etching a metal layer of a semiconductor device is provided. A metal layer formed on a substrate is etched using a hard mask and a mixed etching gas containing chlorine and oxygen in which the ratio of oxygen gas is preferably about 0.5-0.8. Under such conditions, a metal layer pattern of a fine profile is formed. Since the hard mask is thin, it is possible to prevent etch reactants generated in a process of etching the metal layer from being deposited on the side surface of the resultant formed of the metal layer pattern and the hard mask. As a result, no additional processing is required to remove the etch reactants from the side surfaces and the metal layer etching process is simplified.

REFERENCES:
patent: 5236550 (1993-08-01), Abt et al.
patent: 5515984 (1996-05-01), Yokoyama et al.
patent: 5840200 (1998-11-01), Nakagawa et al.

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