Method for etching indium based III-V compound semiconductors

Details Method for etching indium based III-V compound semiconductors Method for etching indium based III-V compound semiconductors

1992-05-01

1994-08-16

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, H01L 21306

Patent

active

053383940

ABSTRACT:
InP is etched by reactive ion etching using a mixture of SiCl.sub.4 and CH.sub.4 or a mixture of SiCl.sub.4 and H.sub.2. A mask is placed on the InP and then it is placed into a RIE chamber having a pressure between approximately 5 mTorr and approximately 50 mTorr. The InP substrate is etched at a substrate temperature of less than 150.degree. C.

REFERENCES:
patent: 4445218 (1984-04-01), Coldren
patent: 4529685 (1985-07-01), Borodovsky
patent: 4878993 (1989-11-01), Rossi et al.
patent: 4927785 (1990-05-01), Theeten et al.
patent: 5034092 (1991-07-01), Lebby
patent: 5068007 (1991-11-01), Rogers
patent: 5074955 (1991-12-01), Henry
Fathimulla et al "Reactive Ion Etching of Indium-Based III-V Materials Using Methane-Hydrogen-Argon Mixtures" abstracted in Chemical Abstracts vol. 112, #63, 419V (1990).

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