Method for etching high dielectric constant materials

Details Method for etching high dielectric constant materials Method for etching high dielectric constant materials

2011-06-21

2011-06-21

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C257SE21218, C257SE21219, C257SE21253

Reexamination Certificate

active

07964512

ABSTRACT:
In one implementation, a method is provided for etching a high k dielectric material in a plasma etch reactor, the method comprising plasma etching the high k dielectric material with a first plasma gas reactant mixture having BCl3. The high k dielectric material may include Al2O3in a stack having a silicon layer. The etching may include supplying a passivation gas, for example C2H4, and may further include supplying a diluent gas such as a noble gas, for example He. In some implementations, the etching may be performed with a reactive ion etch process.

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