Method for etching HgCdTe substrate

Details Method for etching HgCdTe substrate Method for etching HgCdTe substrate

1994-10-11

1996-07-09

Bowers, Jr., Charles L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

252 791, H01L 21306, B44C 122

Patent

active

055341098

ABSTRACT:
A method for etching an HgCdTe substrate selectively by dry etching. A substrate is selectively etched without damaging the substrate during a simple process in which the higher selectivity of an HgCdTe substrate versus a resist mask is obtainable. Removal of the resist mask after etching is easy. The etching gas contains molecules having a bond of nitrogen and hydrogen and is formed into plasma. An HgCdTe substrate is etched with a resist film as a mask by the plasma gas.

REFERENCES:
patent: 4465552 (1984-08-01), Bobbio et al.
patent: 4838984 (1989-06-01), Luttmer et al.
patent: 5000820 (1991-03-01), Douglas
"Novel CH.sub.4 /H.sub.2 Metalorganic Reactive Ion Etching of Hg.sub.1-x Cd.sub.x Te" by Allen Semu et al., Appl. Phys. Lett., No. 59 (14), Sep. 30 1991, American Institute of Physics, pp. 1752-1754.
"Ion Beam Milling of Cd.sub.0.2 Hg.sub.0.8 Te" by M. A. Lunn et al., Journal of Crystal Growth 73 (1983), North-Holland, Amsterdam, pp. 379-384.

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