Method for etching and/or patterning a silicon-containing layer

Details Method for etching and/or patterning a silicon-containing layer Method for etching and/or patterning a silicon-containing layer

2005-05-10

2005-05-10

Deo, Duy-Vu (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S716000, C438S719000, C438S723000, C438S745000, C438S753000, C438S756000, C134S001100, C134S001200, C134S001300

Reexamination Certificate

active

06890860

ABSTRACT:
Prior to etching a poly-II layer during fabrication of an integrated circuit, a hydrofluoric acid (HF) dip is used to remove surface oxides from the poly-silicon layer and an anisotropic descumming operation is used to remove any resist material left over from a patterning operation. Following patterning, a long breakthrough etch (e.g., sufficient to remove 300-1500 Å of oxide) using an anisotropic breakthrough etchant (e.g., a fluorocarbon-based etchant) is performed before the poly-silicon layer is etched. The HF dip may be repeated if a predetermined time between the first dip and the etch is exceeded. The anisotropic descumming operation may be performed using an anisotropic anti-reflective coating (ARC) etch, e.g., a Cl2/O2, HBr/O2, CF4/O2or another etch having an etch rate of approximately 3000 Å/min for approximately 10-20 seconds. The poly-silicon layer may be annealed following (but not prior to) the etch thereof.

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