Method for etching and controlled chemical vapor deposition

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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118728, 148175, 156611, 156612, 156613, 156345, 156646, 156662, 156DIG111, 427 87, 4272551, 427309, H01L 21306, H01L 736, B05D 512, C23C 1100

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044682832

ABSTRACT:
A high velocity stream of gas comprising of either the carrier gas or one or more film forming or removing components is shot through a shooting means such as a nozzle or orifice in the form of a high speed stream of gas in a chemical vapor deposition growth chamber or within an attachment receiving reaction gases from such a chamber. This gas or mixture of gases entrains all of the adjacent gases within the vicinity of the shooting nozzle or orifice and is subsequently swept through a diffusion tube. The diffusion tube compresses and exhausts the gas mixture at a pressure sufficient to drive the combined gas mixture through a heat exchanger and finally back into the growth chamber. The gases within the growth chamber are provided for entrainment downstream to a heated base or substrate which is being coated with a thin film or epitaxial layer of film forming components contained in a carrier gas. The entrained temperature adjusted gas mixture together with the high velocity gas mixture is reintroduced upstream of the same heated base or substrates in the growth chamber.

REFERENCES:
patent: 3522118 (1970-07-01), Taylor et al.
patent: 3721583 (1973-03-01), Blakeslee
patent: 3916034 (1975-10-01), Tsuchimoto
patent: 4095004 (1978-06-01), Fraas et al.
patent: 4401507 (1983-08-01), Engle

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