Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2003-11-25
2008-09-16
Vinh, Lan (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S706000, C438S710000, C438S714000, C438S738000
Reexamination Certificate
active
07425512
ABSTRACT:
The present invention provides a method for etching a substrate, a method for forming an integrated circuit, an integrated circuit formed using the method, and an integrated circuit. The method for etching a substrate includes, among other steps, providing a substrate140having an aluminum oxide etch stop layer130located thereunder, and then etching an opening150, 155, in the substrate140using an etchant comprising carbon oxide, a fluorocarbon, an etch rate modulator, and an inert carrier gas, wherein a flow rate of the carbon oxide is greater than about 80 sccm and the etchant is selective to the aluminum oxide etch stop layer130. The aluminum oxide etch stop layer may also be used in the back-end of advanced CMOS processes as a via etch stop layer.
REFERENCES:
patent: 5324683 (1994-06-01), Fitch et al.
patent: 5897713 (1999-04-01), Tomioka et al.
patent: 6162583 (2000-12-01), Yang et al.
patent: 6500763 (2002-12-01), Kim et al.
patent: 6555896 (2003-04-01), Cathey et al.
patent: 6611014 (2003-08-01), Kanaya et al.
patent: 6635185 (2003-10-01), Demmin et al.
patent: 6686293 (2004-02-01), Kim et al.
patent: 6713310 (2004-03-01), Song et al.
patent: 2002/0142610 (2002-10-01), Chien et al.
patent: 2003/0127422 (2003-07-01), Tsuchiya
Albrecht Martin G.
Celii Francis G.
Dostalik, Jr. William W.
Moise Ted S.
Summerfelt Scott R.
Brady III Wade J.
Vinh Lan
LandOfFree
Method for etching a substrate and a device formed using the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for etching a substrate and a device formed using the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for etching a substrate and a device formed using the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3977600