Semiconductor device manufacturing: process – Chemical etching – Having liquid and vapor etching steps
Reexamination Certificate
2005-03-15
2005-03-15
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Having liquid and vapor etching steps
C438S717000, C438S723000, C438S724000
Reexamination Certificate
active
06867143
ABSTRACT:
An etching process using germanium hard mask (25) includes forming a dielectric layer (15) over a major surface (11) of a semiconductor substrate (10) and depositing a metallic germanium layer (22) over the dielectric layer (15). The metallic germanium layer (22) is patterned through a photo resist (24) to form the germanium hard mask (25). The dielectric layer (15) is selectively etched through the germanium hard mask (25) to form a dielectric hard mask (35), through which the semiconductor substrate (10) is subsequently etched. After forming the dielectric hard mask (35), the germanium hard mask (25) is stripped away by oxidizing the metallic germanium hard mask (25) to transform it into a layer (27) of germanium oxide and rinsing the semiconductor substrate (10) in water to remove the germanium oxide layer (27). Preferably, the germanium hard mask (25) is removed before etching the semiconductor substrate (10).
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Furukawa Toshiharu
Hakey Mark C.
Holmes Steven J.
Horak David V.
Ma William H-L.
Fourson George
International Business Machines - Corporation
Maldonado Julio J.
Sabo William D.
Schmeiser Olsen & Watts
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