Method for etching a semiconductor substrate or layer

Details Method for etching a semiconductor substrate or layer Method for etching a semiconductor substrate or layer

1984-09-24

1986-06-17

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 1566591, 156662, 204192E, 252 791, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

045954534

ABSTRACT:
A semiconductor substrate or layer formed principally of silicon or silicon carbide is selectively or nonselectively etched by using a hydrogen fluoride gas plasma as a reactive gas plasma.
In the case of nonselectively etching the semiconductor substrate or layer, a mask layer of silicon oxide, silicon nitride, metal such as aluminum, chrominum, nickel, cobalt, tantalum, tungsten or molybdenum, or photoresist is preformed into a required pattern on the semiconductor substrate or layer.

REFERENCES:
patent: 3615956 (1971-10-01), Irving et al.

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