Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2005-11-29
2005-11-29
Goudreau, George A. (Department: 1763)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C438S723000, C438S736000, C438S742000, C438S743000, C216S024000, C216S051000, C216S080000
Reexamination Certificate
active
06969568
ABSTRACT:
A chromeless phase lithography mask (30) that does not require photoresist to manufacture has a quartz substrate (32) is etched by using a plasma (38) containing one of a nitrogen augmented hydro-fluorocarbon oxygen mixture and a nitrogen augmented fluorocarbon oxygen mixture. Various hydro-fluorocarbons or fluorocarbons may be used. The nitrogen addition results in etched openings in the quartz substrate that have substantially vertical sidewalls in a uniform manner across the substrate. Surface roughness is minimized and edges of the openings are well-defined with minimal rounding. The etch rate is rendered controllable by reducing bias power without degrading a desired vertical sidewall profile.
REFERENCES:
patent: 4957834 (1990-09-01), Matsuda et al.
patent: 5691090 (1997-11-01), Isao et al.
patent: 6503664 (2003-01-01), Dove et al.
patent: 6524755 (2003-02-01), Jin et al.
patent: 6703169 (2004-03-01), Fuller et al.
patent: 0 668 539 (1995-08-01), None
Constantine et al., “ICP Quartz Etch Uniformity Improvement for Phase Shift Mask Fabrication,”Part of the SPIE Conference on Photomask and X-Ray Mask Technology V, Kawasaki, Japan,SPIE, vol. 3412, Apr. 1998, pp. 220-.
Dahm et al., “Quartz Etching for Phase Shifting Masks,”Microelectronic Engineering, 1995, vol. 27, pp. 263-266.
Wu et al., “CF4/O2Plasma Simulation and Comparison with Quartz Etch Experiment,”Photomask and Next-Generation Lithography Mask Technology VIII, Hiroichi Kawahira, Editor,Proceedings of SPIE, 2001, vol. 4409, pp. 409-417.
Zeze et al., “Reactive Ion Etching of Quartz and Pyrex for Microelectronic Applications,”Journal of Applied Physics, Oct. 2002, vol. 92, No. 7, pp. 3624-3629.
Rauf Shahid
Ventzek Peter L. G.
Wu Wei E.
Balconi-Lamica Michael J.
Freescale Semiconductor Inc.
Goudreau George A.
King Robert L.
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