Method for etching a quartz layer in a photoresistless...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S723000, C438S736000, C438S742000, C438S743000, C216S024000, C216S051000, C216S080000

Reexamination Certificate

active

06969568

ABSTRACT:
A chromeless phase lithography mask (30) that does not require photoresist to manufacture has a quartz substrate (32) is etched by using a plasma (38) containing one of a nitrogen augmented hydro-fluorocarbon oxygen mixture and a nitrogen augmented fluorocarbon oxygen mixture. Various hydro-fluorocarbons or fluorocarbons may be used. The nitrogen addition results in etched openings in the quartz substrate that have substantially vertical sidewalls in a uniform manner across the substrate. Surface roughness is minimized and edges of the openings are well-defined with minimal rounding. The etch rate is rendered controllable by reducing bias power without degrading a desired vertical sidewall profile.

REFERENCES:
patent: 4957834 (1990-09-01), Matsuda et al.
patent: 5691090 (1997-11-01), Isao et al.
patent: 6503664 (2003-01-01), Dove et al.
patent: 6524755 (2003-02-01), Jin et al.
patent: 6703169 (2004-03-01), Fuller et al.
patent: 0 668 539 (1995-08-01), None
Constantine et al., “ICP Quartz Etch Uniformity Improvement for Phase Shift Mask Fabrication,”Part of the SPIE Conference on Photomask and X-Ray Mask Technology V, Kawasaki, Japan,SPIE, vol. 3412, Apr. 1998, pp. 220-.
Dahm et al., “Quartz Etching for Phase Shifting Masks,”Microelectronic Engineering, 1995, vol. 27, pp. 263-266.
Wu et al., “CF4/O2Plasma Simulation and Comparison with Quartz Etch Experiment,”Photomask and Next-Generation Lithography Mask Technology VIII, Hiroichi Kawahira, Editor,Proceedings of SPIE, 2001, vol. 4409, pp. 409-417.
Zeze et al., “Reactive Ion Etching of Quartz and Pyrex for Microelectronic Applications,”Journal of Applied Physics, Oct. 2002, vol. 92, No. 7, pp. 3624-3629.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for etching a quartz layer in a photoresistless... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for etching a quartz layer in a photoresistless..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for etching a quartz layer in a photoresistless... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3500838

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.