Method for etching a platinum layer in a semiconductor device

Details Method for etching a platinum layer in a semiconductor device Method for etching a platinum layer in a semiconductor device

1998-08-24

2000-04-25

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438720, H01L 2100, H01L 213065

Patent

active

060543914

ABSTRACT:
A method of etching a platinum (Pt) layer of a semiconductor device includes the steps of forming a platinum layer on a semiconductor substrate, and forming a mask layer on the platinum layer. A photoresist pattern is formed on the mask layer and a mask pattern is formed by plasma-etching using the photoresist pattern as a mask. A platinum pattern is formed by plasma-etching using the photoresist pattern and the mask pattern as a mask. A platinum etching by-product is formed on the sidewalls of the photoresist pattern. The platinum layer is plasma-etched using Ar, Ar/Cl.sub.2 or Ar/HBr gas. The photoresist pattern is removed and then the platinum etching by-product and the mask pattern are removed by plasma etching. The platinum etching by-product is plasma-etched using Cl.sub.2 /O.sub.2 or HBr/O.sub.2 gas. The platinum pattern may be formed in the same etch chamber through multiple steps, and the platinum layer is etched using Ar, Ar/Cl.sub.2 or Ar/HBr, to thereby increase the etch rate and obtain a platinum pattern having a high etch slope.

REFERENCES:
patent: 5515984 (1996-05-01), Yokoyama et al.
patent: 5573979 (1996-11-01), Tsu et al.
patent: 5618754 (1997-04-01), Kasahara
patent: 5658820 (1997-08-01), Chung
patent: 5726102 (1998-03-01), Lo
patent: 5840200 (1998-11-01), Nakagawa et al.
patent: 5930639 (1999-07-01), Schuele et al.

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