Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1998-04-28
2000-05-02
Morris, Terrel
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438720, 438724, 438739, H01L 213065
Patent
active
060572469
ABSTRACT:
A method for etching a metal layer on a substrate with dimensional control is disclosed. First, an anti-reflection layer is formed over the metal layer. A photoresist layer is then formed over the anti-reflection layer. A metal layer pattern is defined by patterning the photoresist layer. An etching process is performed to etch the anti-reflection layer with dimensional loss compared with the metal layer pattern, by using the photoresist layer as a mask. Another etching process is performed to etch the metal layer with dimensional gain compared with the anti-reflection layer, by using the anti-reflection layer as a mask. A metal layer with nearly zero-biased dimension is achieved.
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Hsieh Chyei-Jer
Jeng Erik S.
Lee I-Ping
Juska Cheryl
Morris Terrel
Vanguard International Semiconductor Corporation
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