Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1994-04-05
1995-10-17
Dang, Thi
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
216 81, B05D 500
Patent
active
054587336
ABSTRACT:
Techniques for synthesizing diamond films include a method for anisotropically etching a diamond film. The method includes the steps of selectively patterning a mask layer on a surface of a diamond film and then subjecting the mask layer and exposed surface portions of the diamond film to a hydrogen-containing plasma, while negatively biasing the diamond film to convert the exposed surface portions of the diamond layer to nondiamond carbon. Negatively biasing the diamond film in the hydrogen-containing plasma causes an emission of electrons to thereby convert exposed diamond surface portions to nondiamond carbon. The hydrogen-containing plasma continuously removes the nondiamond carbon from the surface and maintains the electron emission efficiency of the exposed diamond surface so that further etching can take place.
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Dreifus David L.
Stoner Brian R.
Tessmer Glenn J.
Dang Thi
Kobe Steel USA Inc.
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