Method for etch thinning silicon devices

Details Method for etch thinning silicon devices Method for etch thinning silicon devices

1980-09-26

1983-02-08

Kimlin, Edward C.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156628, 156637, 156651, 156657, 156662, 252 793, H01L 21308

Patent

active

043728030

ABSTRACT:
An improved method for etch-thinning silicon devices using three sequential tches. The device is pre-thinned in a hot KOH-H.sub.2 O etch. The thinning etch is a hydrofluoric, nitric, acetic acids (1:3:10) and a precise amount of hydrogen peroxide mixture. The cleanup etch is a potassium permanganate, hydrofluoric and acetic acids mixture. The result is a repeatedly specular, smooth, uniform, 10 micron thick membrane over the pixels with a p.sup.+ surface to enhance the CCI optical response.

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