Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1997-11-10
2000-11-07
Cain, Edward J.
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
216 64, 216 65, 216 66, 216 67, 216 75, 216 76, B44C 122
Patent
active
061431915
ABSTRACT:
A method of forming an iridium-based electrode structure on a substrate, from an iridium-containing precursor thereof which is decomposed to deposit iridium on the substrate. The iridium-based material is formed on the substrate in a desired environment, e.g., an oxidizing ambient environment which may for example contain an oxidizing gas such as oxygen, ozone, air, or nitrogen oxide, or alternatively a reducing environment containing a reducing agent such as H.sub.2, CO or NH.sub.3. The iridium deposited on the substrate is contacted with an etching reagent such as halogen-based etch species (e.g., Cl.sub.2, Br.sub.2, F.sub.2, CCl.sub.4, Si.sub.2 F.sub.6, SiCl.sub.4, NF.sub.3, C.sub.2 F.sub.6, SF.sub.6, or CF.sub.4) formed by exposing halogen to light, laser radiation, plasma, or ion beam, or alternatively with XeF.sub.2, for sufficient time and under sufficient conditions to etch the deposited iridium-based material and form the etched iridium-based electrode structure. The electrode structure may then have a dielectric or ferroelectric material deposited thereon, for fabrication of thin film capacitor semiconductor devices such as DRAMs, FeRAMs, hybrid systems, smart cards and communication systems.
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Baum Thomas H.
DiMeo, Jr. Frank
Advanced Technology & Materials Inc.
Cain Edward J.
Hultquist Steven J.
Zitzmann Oliver A.M.
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